Low-power W-Band CPWG InAs/AlSb HEMT low-noise amplifier

被引：14
|
作者：
Riemer, PJ [1 ]
Buhrow, BR
Hacker, JB
Bergman, J
Brar, B
Gilbert, BK
Daniel, ES
机构：
[1] Mayo Clin, Rochester, MN 55905 USA
[2] Rockwell Int Corp, Thousand Oaks, CA 91360 USA
来源：
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2006年 / 16卷 / 01期
关键词：
antimonide-based compound semiconductor (ABCS); high electron mobility transistor (HEMT); low-noise amplifier (LNA); InAs/AlSb; W-band;
D O I：
10.1109/LMWC.2005.861343
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present the development of a low-power W-band low-noise amplifier (LNA) designed in a 200-nm InAs/AlSb high electron mobility transistor (HEMT) technology fabricated on a 50-mu m GaAs substrate. A single-stage coplanar waveguide with ground (CPWG) LNA is described. The LNA exhibits a noise figure of 2.5 dB and an associated gain of 5.6 dB at 90 GHz while consuming 2.0 mW of total dc power. This is, to the best of our knowledge, the lowest reported noise figure for an InAs/AlSb HEMT LNA at 90 GHz. Biased for maximum gain, the single-stage amplifier presents 6.7-dB gain and an output 1-dB gain compression point (P1dB) of -6.7 dBm at 90 GHz. The amplifier provides broad-band gain, greater than 5 dB over the entire W-band.
引用
收藏
页码：40 / 42
页数：3
相关论文
共 50 条
  • [21] A MONOLITHIC KA-BAND HEMT LOW-NOISE AMPLIFIER
    YUEN, C
    NISHIMOTO, CK
    GLENN, MW
    PAO, YC
    LARUE, RA
    NORTON, R
    DAY, M
    ZUBECK, I
    BANDY, SG
    ZDASIUK, GA
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1988, 36 (12) : 1930 - 1937
  • [22] A Low-Power Low-Noise W-band LNA in 90-nm CMOS Process with Source Degeneration Technique
    Huang P.-H.
    Chiu C.-S.
    Huang G.-W.
    Chen K.-M.
    Wu L.-K.
    IEEE Microwave and Wireless Technology Letters, 2024, 34 (01): : 69 - 71
  • [23] KA/Q-BAND BROAD-BAND, KA AND W-BAND LOW-NOISE HEMT AMPLIFIERS
    ARCHER, ED
    RYU, YI
    1989 IEEE MILITARY COMMUNICATIONS CONFERENCE, VOLS 1-3: BRIDGING THE GAP : INTEROPERABILITY, SURVIVABILITY, SECURITY, 1989, : 735 - 738
  • [24] Metamorphic AlSb/InAs HEMT for low-power, high-speed electronics
    Tsai, R
    Barsky, M
    Boos, JB
    Bennett, BR
    Lee, J
    Papanicolaou, NA
    Magno, R
    Namba, C
    Liu, PH
    Park, D
    Grundbacher, R
    Gutierrez, A
    GAAS IC SYMPOSIUM - 25TH ANNUAL TECHNICAL DIGEST 2003, 2003, : 294 - 297
  • [25] InAs/AlSb HEMT and its application to ultra-low-power wideband high-gain low-noise amplifiers
    Ma, Bob Yintat
    Bergman, Joshua
    Chen, Peter
    Hacker, Jonathan B.
    Sullivan, Gerard
    Nagy, Gabor
    Brar, Bobby
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2006, 54 (12) : 4448 - 4455
  • [26] Low-power low-noise RF amplifier for RFID applications
    Yildirim, Bahadir
    Manzak, Ali
    PROCEEDINGS OF THE 1ST RFID EURASIA CONFERENCE, 2007, : 290 - +
  • [27] Low-power low-noise BJT amplifier for nuclear applications
    Bertuccio, G
    Cordoni, M
    Fasoli, L
    Sampietro, M
    1996 IEEE NUCLEAR SCIENCE SYMPOSIUM - CONFERENCE RECORD, VOLS 1-3, 1997, : 470 - 473
  • [28] A Low-Noise Low-Power MOSFET only Electrocardiogram Amplifier
    Ghamati, Maryam
    Maymandi-Nejad, Mohammad
    2013 21ST IRANIAN CONFERENCE ON ELECTRICAL ENGINEERING (ICEE), 2013,
  • [29] The design of a 2.45 GHz low-power low-noise amplifier
    Qian Yi
    Zhu Xiao-rong
    2011 INTERNATIONAL CONFERENCE ON COMPUTER SCIENCE AND NETWORK TECHNOLOGY (ICCSNT), VOLS 1-4, 2012, : 670 - 673
  • [30] LOW-POWER, LOW-NOISE INSTRUMENTATION AMPLIFIER FOR PHYSIOLOGICAL SIGNALS
    HAMSTRA, GH
    PEPER, A
    GRIMBERGEN, CA
    MEDICAL & BIOLOGICAL ENGINEERING & COMPUTING, 1984, 22 (03) : 272 - 274
12345