Investigations on the ignition characteristics of a semiconductor bridge with an electrostatic discharge

被引：6
|
作者：
Guo, X. -R. [1 ]
Zhang, L. [1 ]
Zhu, Sh-G [1 ]
Li, Y. [1 ]
Ma, P. [1 ]
机构：
[1] Nanjing Univ Sci & Technol, Nanjing 210094, Jiangsu, Peoples R China
来源：
COMBUSTION EXPLOSION AND SHOCK WAVES | 2013年 / 49卷 / 02期
关键词：
electrostatic discharge; semiconductor bridge; ignition characteristics; invalidation threshold voltage; multiple discharging;
D O I：
10.1134/S0010508213020159
中图分类号：
O414.1 [热力学];
学科分类号：
摘要：
The damage characteristics of a typical semiconductor bridge and a microsemiconductor bridge under the action of an electrostatic discharge are studied in experiments, which include semiconductor film shape measurement, resistance fluctuate evaluation, ignition characteristics, and invalidation threshold voltage measurement. The effect of multiple discharging on the bridge state is also discussed.
引用
收藏
页码：231 / 237
页数：7
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