Epitaxial metallic β-Nb2N films grown by MBE on hexagonal SiC substrates

被引：41

作者：

Katzer, D. Scott ^{[1
]}

Nepal, Neeraj ^{[2
]}

Meyer, David J. ^{[1
]}

Downey, Brian P. ^{[1
]}

Wheeler, Virginia D. ^{[1
]}

Storm, David F. ^{[1
]}

Hardy, Matthew T. ^{[3
]}

机构：

[1] US Naval Res Lab, Electromagnet Technol Branch, Washington, DC 20375 USA

[2] Sotera Def Solut, Herndon, VA 20171 USA

[3] US Naval Res Lab, Washington, DC 20375 USA

来源：

APPLIED PHYSICS EXPRESS | 2015年 / 8卷 / 08期

关键词：

NBN THIN-FILMS; TEMPERATURE; CONSTANTS;

D O I：

10.7567/APEX.8.085501

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

RF-plasma MBE was used to epitaxially grow 4- to 100-nm-thick metallic beta-Nb2N thin films on hexagonal SiC substrates. When the N/Nb flux ratios are greater than one, the most critical parameter for high-quality beta-Nb2N is the substrate temperature. The X-ray characterization of films grown between 775 and 850 degrees C demonstrates beta-Nb2N phase formation. The (0002) and (21 (3) over bar1) X-ray diffraction measurements of a beta-Nb2N film grown at 850 degrees C reveal a 0.68% lattice mismatch to the 6H-SiC substrate. This suggests that beta-Nb2N can be used for high-quality metal/semiconductor heterostructures that cannot be fabricated at present. (C) 2015 The Japan Society of Applied Physics

引用

页数：4

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