Independent-gate four-terminal FinFET SRAM for drastic leakage current reduction

被引：0

作者：

Endo, Kazuhiko ^{[1
]}

O'uchi, Shin-ichi ^{[1
]}

Ishikawa, Yuki ^{[1
]}

Liu, Yongxun ^{[1
]}

Matsukawa, Takashi ^{[1
]}

Sakamoto, Kunihiro ^{[1
]}

Masahara, Meishoku ^{[1
]}

Tsukada, Junichi ^{[1
]}

Ishii, Kenichi ^{[1
]}

Yamauchi, Hiromi ^{[1
]}

Suzuki, Eiichi ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Nanoelect Res Inst, Tsukuba, Ibaraki 3058568, Japan

来源：

2008 IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUIT DESIGN AND TECHNOLOGY, PROCEEDINGS | 2008年

关键词：

FinFET; separated gate; SRAM; leakage current;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An Independent-gate four-terminal FinFET SRAM have been successfully fabricated for drastic leakage current reduction. The new SRAM is consisted of a four-terminal (4T-) FinFET which has a flexible V-th controllability. The 4T-FinFET with a TiN metal gate is fabricated by a newly developed gate separation etching process. By appropriately controlling the V-th of the 4T-FinFET, we have successfully demonstrated the reduction of the leakage current and power consumption of the SRAM cell.

引用

页码：63 / 66

页数：4

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