Depletion/Enhancement-mode β-Ga2O3 on Insulator Field-effect Transistors with Drain Currents Exceeding 1.5/1.0 A/mm

被引：0
|
作者：
Zhou, Hong [1 ]
Ye, Peide D. [1 ]
机构：
[1] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47906 USA
来源：
2017 75TH ANNUAL DEVICE RESEARCH CONFERENCE (DRC) | 2017年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
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页数：2
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