Stability of Zinc Oxide Thin-Film Transistors

被引：0
|
作者：
Li, Shao-juan [1 ]
Sun, Lei [1 ]
Han, De-dong [1 ]
Wang, Yi [1 ]
Han, Ru-qi [1 ]
Zhang, Sheng-dong [2 ]
机构：
[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China
[2] Peking Univ, ShenZhen Grad Sch, Shenzhen 518055, Peoples R China
来源：
CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2012 (CSTIC 2012) | 2012年 / 44卷 / 01期
关键词：
D O I：
10.1149/1.3694296
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
In this paper, the construction and stability of thin-film transistors (TFTs) with ZnO as active layer are investigated. The bottom-gated ZnO TFTs exhibit n-channel enhancement mode behavior, including an on/off current ratio of 2.4x10(7), a low off-current value in the order of 10(-12) A, a field effect mobility of 1.8cm(2)/V.s. The threshold voltage shift in positive direction with increasing the channel length is clearly observed. The application of positive and negative bias stress results in the device transfer characteristics shifting in positive and negative direction. The stressed devices show a logarithmic time-dependent threshold voltage shift and recover to near-original characteristic without any annealing.
引用
收藏
页码：57 / 62
页数：6
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