Advanced low temperature bonding technologies

被引:0
|
作者
Pelzer, R [1 ]
Dragoi, V [1 ]
Kettner, P [1 ]
Lee, D [1 ]
机构
[1] EV Grp, A-4780 Schaerding, Austria
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The different fields and especially its various applications for micro electro mechanical systems (MEMS) prevent the use of uniform packaging techniques for all types of p-device. Several bonding techniques performed at wafer-scale, with the advantage of protecting the device against particles, contaminations or even damage during the sawing and dicing process are used right now. Most of these techniques are performed at high temperatures during the bond, wet cleaning process steps - totally inapplicable for la-moving parts - or insufficient hermeticity in the final package. Bonding techniques based on dry plasma activation and adhesive wafer-level bonding of MEMS are therefore a very interesting alternative to the common techniques. Main advantages of these two techniques are: temperature sensitive devices or heterogeneous materials with different CTE can be bonded together on wafer scale; there are no wet activation or cleaning processes involved.
引用
收藏
页码:34 / 38
页数:5
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