Non-Markovian spin transfer dynamics in magnetic semiconductors despite short memory times

被引:18
|
作者
Thurn, C. [1 ]
Cygorek, M. [1 ]
Axt, V. M. [1 ]
Kuhn, T. [2 ]
机构
[1] Univ Bayreuth, D-95440 Bayreuth, Germany
[2] Univ Munster, Inst Festkorpertheorie, D-48149 Munster, Germany
来源
PHYSICAL REVIEW B | 2013年 / 87卷 / 20期
关键词
QUANTUM-WELLS; SCATTERING;
D O I
10.1103/PhysRevB.87.205301
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A quantum kinetic theory of the spin transfer between carriers and Mn atoms in a Mn-doped diluted magnetic semiconductor is presented. It turns out that the typical memory time associated with these processes is orders of magnitude shorter than the time scale of the spin transfer. Nevertheless, Markovian rate equations, which are obtained by neglecting the memory, work well only for bulk systems. For quantum wells and wires the quantum kinetic results qualitatively deviate from the Markovian limit under certain conditions. Instead of a monotonic decay of an initially prepared excess electron spin, an overshoot or even coherent oscillations are found. It is demonstrated that these features are caused by energetic redistributions of the carriers due to the energy-time uncertainty.
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页数:10
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