Room temperature, Sb-based monolithic EP-VCSEL at 2.3 μm including 2 n-type DBR

被引：0
|
作者：
Ducanchez, A. [1 ]
Cerutti, L. [1 ]
Garnache, A. [1 ]
Genty, F. [1 ]
机构：
[1] Univ Montpellier 2, IES, CNRS, UMR 5214, F-34095 Montpellier 05, France
来源：
2008 CONFERENCE ON LASERS AND ELECTRO-OPTICS & QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE, VOLS 1-9 | 2008年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We demonstrate a 2.3 mu m emission at RT under quasi-CW operation from a Sb-based monolithic VCSEL. The structure is composed of 2 n-doped AlAsSb/GaSb DBR, a type-I GaInAsSb/AlGaAsSb QWs active region and a tunnel junction. (C) 2009 Optical Society of America
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收藏
页码：1760 / 1761
页数：2
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