Delicate balance between ferroelectricity and antiferroelectricity in hexagonal InMnO3

被引:33
|
作者
Huang, F. -T. [1 ,2 ]
Wang, X. [1 ,2 ]
Oh, Y. S. [1 ,2 ]
Kurushima, K. [3 ]
Mori, S. [4 ]
Horibe, Y. [1 ,2 ]
Cheong, S. -W. [1 ,2 ]
机构
[1] Rutgers State Univ, Rutgers Ctr Emergent Mat, Piscataway, NJ 08854 USA
[2] Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08854 USA
[3] Toray Res Ctr, Otsu, Shiga 5208567, Japan
[4] Osaka Prefecture Univ, Dept Mat Sci, Sakai, Osaka 5998531, Japan
基金
美国国家科学基金会;
关键词
D O I
10.1103/PhysRevB.87.184109
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The presence of ferroelectricity in hexagonal InMnO3 has been highly under debate. The results of our comprehensive experiments of low-temperature (T) polarization, transmission electron microscopy, and high-angle annular dark-field scanning TEM on well-controlled InMnO3 reveal that the ground state is ferroelectric with P6(3)cm symmetry, but a nonferroelectric P (3) over bar c1 state exists at high T and can be quenched to room temperature. We found that the competing ferroelectric and antiferroelectric phases coexist in mesoscopic scales and can be deliberately controlled by varying thermal treatments.
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页数:4
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