Modeling and Characterization of CNT-Based TSV for High Frequency Applications

被引：0
|
作者：
Kannan, Sukeshwar [1 ]
Kim, Bruce [1 ]
Gupta, Anurag [1 ]
Li, Li
Noh, Seok-Ho
Cho, Sang-Bock
机构：
[1] Univ Alabama, Dept Elect & Comp Engn, Tuscaloosa, AL 35487 USA
来源：
2012 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS 2012) | 2012年
关键词：
DESIGN;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents modeling and characterization of CNT-based TSVs for high frequency applications. We have developed an integrated model of CNT-based TSVs by incorporating quantum confinement effects of CNTs along with kinetic inductance phenomenon at high frequencies. Substrate parasitics have been appropriately modeled as monolithic microwave capacitor by resonant line technique using a two-polynomial equation. Different parametric variations in the model have been outlined as case studies. Furthermore, electrical performance and signal integrity analysis on different cases have been used to determine optimized configuration for TSV-based CNTs for radar applications.
引用
收藏
页码：1584 / 1589
页数：6
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