Analysis of strain and intermixing in single-layer Ge/Si quantum dots using polarized Raman spectroscopy

被引：74

作者：

Baranov, AV

Fedorov, AV

Perova, TS ^{[1
]}

Moore, RA

Yam, V

Bouchier, D

Le Thanh, V

Berwick, K

机构：

[1] SI Vavilov State Opt Inst, St Petersburg 199034, Russia

[2] Univ Dublin Trinity Coll, Dept Elect & Elect Engn, Dublin 2, Ireland

[3] Univ Paris 11, UMR CNRS 8622, Inst Elect Fondamentale, F-91405 Orsay, France

[4] CNRS, Ctr Rech Mecanismes Croissnce Cristalline, CRMC2, F-13288 Marseille 9, France

[5] Dublin Inst Technol, Dept Elect & Commun Engn, Dublin 8, Ireland

来源：

PHYSICAL REVIEW B | 2006年 / 73卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.73.075322

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The built-in strain and composition of as-grown and Si-capped single layers of Ge/Si dots grown at various temperatures (460-800 degrees C) are studied by a comparative analysis of the Ge-Ge and Si-Ge modes in the polarized Raman spectra of the dots. A pronounced reduction of the strain and Ge content in the dots after deposition of the cap layer at low temperatures is observed, indicating that strain-induced Si diffusion from the cap layer is occurring. For large dots grown at 700-800 degrees C the observations are in agreement with a model of the Ge/Si dot consisting of a Si-rich boundary region and a Ge-rich core.

引用

页数：6

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