Effective Channel Mobility of AlGaN/GaN-on-Si Recessed-MOS-HFETs

被引：3

作者：

Kim, Hyun-Seop ^{[1
]}

Heo, Seoweon ^{[1
]}

Cha, Ho-Young ^{[1
]}

机构：

[1] Hongik Univ, Sch Elect & Elect Engn, 94 Wausan Ro, Seoul 04066, South Korea

来源：

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | 2016年 / 16卷 / 06期

基金：

新加坡国家研究基金会;

关键词：

AlGaN/GaN heterojunction field-effect transistor; SiO2; Mobility; Recessed gate; MOS-HFET; HEMTS; GATE;

D O I：

10.5573/JSTS.2016.16.6.867

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated the channel mobility of AlGaN/GaN-on-Si recessed-metal-oxide-semicon-ductor-heterojunction field-effect transistors (recessedMOS- HFET) with SiO2 gate oxide. Both field-effect mobility and effective mobility for the recessed-MOS channel region were extracted as a function of the effective transverse electric field. The maximum field effect mobility was 380 cm(2)/V.s near the threshold voltage. The effective channel mobility at the on-state bias condition was 115 cm(2)/V.s at which the effective transverse electric field was 340 kV/cm. The influence of the recessed-MOS region on the overall channel mobility of AlGaN/GaN recessed-MOS-HFETs was also investigated.

引用

下载

页码：867 / 872

页数：6

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