Effective Channel Mobility of AlGaN/GaN-on-Si Recessed-MOS-HFETs

被引：3
|
作者：
Kim, Hyun-Seop [1 ]
Heo, Seoweon [1 ]
Cha, Ho-Young [1 ]
机构：
[1] Hongik Univ, Sch Elect & Elect Engn, 94 Wausan Ro, Seoul 04066, South Korea
来源：
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | 2016年 / 16卷 / 06期
基金：
新加坡国家研究基金会;
关键词：
AlGaN/GaN heterojunction field-effect transistor; SiO2; Mobility; Recessed gate; MOS-HFET; HEMTS; GATE;
D O I：
10.5573/JSTS.2016.16.6.867
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have investigated the channel mobility of AlGaN/GaN-on-Si recessed-metal-oxide-semicon-ductor-heterojunction field-effect transistors (recessedMOS- HFET) with SiO2 gate oxide. Both field-effect mobility and effective mobility for the recessed-MOS channel region were extracted as a function of the effective transverse electric field. The maximum field effect mobility was 380 cm(2)/V.s near the threshold voltage. The effective channel mobility at the on-state bias condition was 115 cm(2)/V.s at which the effective transverse electric field was 340 kV/cm. The influence of the recessed-MOS region on the overall channel mobility of AlGaN/GaN recessed-MOS-HFETs was also investigated.
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页码：867 / 872
页数：6
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