Highly sensitive hydrogen sulphide sensors operable at room temperature

被引：59

作者：

Sen, S

Bhandarkar, V

Muthe, KP

Roy, M

Deshpande, SK

Aiyer, RC

Gupta, SK ^{[1
]}

Yakhmi, JV

Sahni, V

机构：

[1] Bhabha Atom Res Ctr, Tech Phys & Prototype Engn Div, Bombay 400085, Maharashtra, India

[2] Bhabha Atom Res Ctr, Novel Mat & Struct Chem Div, Bombay 400085, Maharashtra, India

[3] Bhabha Atom Res Ctr, UGC DAE, Consortium Sci Res, Mumbai Ctr, Bombay 400085, Maharashtra, India

[4] Univ Pune, Dept Phys, Pune 411007, Maharashtra, India

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 2006年 / 115卷 / 01期

关键词：

sensors; semiconductor; thin films; grain boundaries;

D O I：

10.1016/j.snb.2005.09.013

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

Tellurium thin films have been investigated for use as hydrogen sulphide gas sensors. The films were prepared by thermal evaporation on alumina substrates at a temperature of 373 K and were found to be sensitive towards 0.1 ppm of H2S at room temperature. The response was reproducible and the films were stable for operation over 3 months. Detection mechanism of the sensors was investigated and it was found that hydrogen sulphide reduced the amount of adsorbed oxygen on the Te film surface leading to increase in resistance. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：270 / 275

页数：6

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