Near EF electronic structure of heavily boron-doped superconducting diamond

被引：8

作者：

Okazaki, H. ^{[1
]}

Yokoya, T. ^{[1
,2
]}

Nakamura, J. ^{[3
]}

Yamada, N. ^{[3
]}

Nakamura, T. ^{[4
]}

Muro, T. ^{[4
]}

Tamenori, Y. ^{[4
]}

Matsushita, T. ^{[4
]}

Takata, Y. ^{[5
]}

Tokushima, T. ^{[5
]}

Shin, S. ^{[5
]}

Takano, Y. ^{[6
]}

Nagao, M. ^{[6
]}

Takenouchi, T. ^{[7
]}

Kawarada, H. ^{[7
]}

Oguchi, T. ^{[8
]}

机构：

[1] Okayama Univ, Grad Sch Nat Sci & Technol, Okayama 7008530, Japan

[2] Japan Sci & Technol Agcy, CREST, Tokyo 1138656, Japan

[3] Univ Electrocommun, Dept Appl Phys & Chem, Tokyo 1828585, Japan

[4] Japan Synchrotron Radiat Res Inst, Sayo, Hyogo 6795198, Japan

[5] RIKEN, Sayo, Hyogo 6795198, Japan

[6] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan

[7] Waseda Univ, Sch Sci & Engn, Shinjuku Ku, Tokyo 1698555, Japan

[8] Grad Sch Adv Sci Matter, Dept Quantum Matter, Higashihiroshima, Hiroshima 7398530, Japan

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 2008年 / 69卷 / 12期

基金：

日本学术振兴会;

关键词：

Photoelectron spectroscopy; Electronic structure; Fermi surface; Superconductivity;

D O I：

10.1016/j.jpcs.2008.06.006

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We have performed soft X-ray angle-resolved photoemission spectroscopy (SXARPES) of a heavily boron-doped superconducting diamond film (T-c = 7.2 K) in order to Study the electronic structure near the Fermi level (E-F). Careful determination of measured momentum space that across F point in the Brillouin zone (BZ) and increase of an energy resolution provide further spectroscopic evidence that EF is located at the highly dispersive diamond-like bands, indicating that holes at the top of the diamond-like valence band play an essential role for the conducting properties of the heavily boron-doped superconducting diamond for this boron-doping region (effective carrier concentration of 1.6%). The SXARPES intensities at E-F were also mapped out over BZ to obtain experimental Fermi surface sheets and compared with calculations. Crown Copyright (c) 2008 Published by Elsevier Ltd. All rights reserved.

引用

页码：2978 / 2981

页数：4

共 50 条

[21] Plasma etching phenomena in heavily boron-doped diamond growth
Fiori, Alexandre
Teraji, Tokuyuki
DIAMOND AND RELATED MATERIALS, 2017, 76 : 38 - 43
[22] Dislocation generation mechanisms in heavily boron-doped diamond epilayers
Araujo, D.
Lloret, F.
Alba, G.
Alegre, M. P.
Villar, M. P.
APPLIED PHYSICS LETTERS, 2021, 118 (05)
[23] Nanostructures made from superconducting boron-doped diamond
Mandal, Soumen
Naud, Cecile
Williams, Oliver A.
Bustarret, Etienne
Omnes, Franck
Rodiere, Pierre
Meunier, Tristan
Saminadayar, Laurent
Baeuerle, Christopher
NANOTECHNOLOGY, 2010, 21 (19)
[24] The local structure in heavily boron-doped diamond and the effect this has on its electrochemical properties
Watanabe, Takeshi
Yoshioka, Satoru
Yamamoto, Tomokazu
Sepehri-Amin, Hossein
Ohkubo, Tadakatsu
Matsumura, Syo
Einaga, Yasuaki
CARBON, 2018, 137 : 333 - 342
[25] Determination of atomic boron concentration in heavily boron-doped diamond by Raman spectroscopy
Mortet, V
Zivcova, Z. Vlckova
Taylor, A.
Davydova, M.
Frank, O.
Hubik, P.
Lorincik, J.
Aleshin, M.
DIAMOND AND RELATED MATERIALS, 2019, 93 : 54 - 58
[26] Effect of boron dimers on the superconducting critical temperature in boron-doped diamond
Sopik, Bretislav
Lipavsky, Pavel
DIAMOND AND RELATED MATERIALS, 2012, 21 : 77 - 82
[27] Electron affinity and effect of annealing on heavily boron-doped diamond films
Wong, KW
Lee, ST
Lin, ZD
Lam, YW
Kwok, RWM
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1999, 38 (2A): : 791 - 794
[28] RAMAN SCATTERING IN HEAVILY BORON-DOPED SINGLE-CRYSTAL DIAMOND
Faggio, G.
Messina, G.
Santangelo, S.
Alfieri, D.
Prestopino, G.
Ciancaglioni, I.
Marinelli, M.
ATTI ACCADEMIA PELORITANA DEI PERICOLANTI-CLASSE DI SCIENZE FISICHE MATEMATICHE E NATURALI, 2011, 89
[29] New perspectives for heavily boron-doped diamond Raman spectrum analysis
Mortet, V
Gregora, I
Taylor, A.
Lambert, N.
Ashcheulov, P.
Gedeonova, Z.
Hubik, P.
CARBON, 2020, 168 (168) : 319 - 327
[30] Local structure analysis of heavily boron-doped diamond by soft x-ray spectroscopy
Muramatsu, Yasuji
Yamamoto, Yuki
DIAMOND AND RELATED MATERIALS, 2013, 39 : 53 - 57

← 1 2 3 4 5 →