Deep reactive ion etching of silica for planar lightwave circuits using indigenously developed ECR/RIE system

被引：1

作者：

Pachauri, JP ^{[1
]}

Baby, A ^{[1
]}

Chaturvedi, N ^{[1
]}

Kothari, HS ^{[1
]}

Singh, A ^{[1
]}

Singh, BR ^{[1
]}

Dixit, PN ^{[1
]}

Bhattacharya, R ^{[1
]}

机构：

[1] Cent Elect Engn Res Inst, Optoelect Devices Grp, Pilani 333031, Rajasthan, India

来源：

PHOTONICS 2000: INTERNATIONAL CONFERENCE ON FIBER OPTICS AND PHOTONICS | 2001年 / 4417卷

关键词：

electron cyclotron resonance; reactive ion etching; splitter; planar lightwave circuits; silica glass film;

D O I：

10.1117/12.441305

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Deep dry etching of silica is used for patterning of waveguides for optoelectronic applications. We report on the use of Electron Cyclotron Resonance/Reactive Ton Etching (ECR/RIE) process for deep reactive ion etching of silica glass films using different fluorocarbons as etch gases. 1 x 8 splitter has been used as test structure for the optimization of the etch process. The optimized process parameters like RF/Microwave power, pressure and gas composition etc. for the above have been presented.

引用

页码：267 / 270

页数：4

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