Highly oriented ZnO thin films deposited on Ru/Si substrates

被引：0
|
作者：
Lim, WT [1 ]
Lee, CH [1 ]
机构：
[1] Hanyang Univ, Dept Phys, Seoul 133791, South Korea
来源：
THIN SOLID FILMS | 1999年 / 353卷 / 1-2期
关键词：
sputtering; structural properties; zinc oxide;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The structural properties of r.f.-sputtered ZnO films prepared onto a Ru/Si and an Al/Si substrate were investigated. The ZnO films were deposited at a substrate temperature of 350 degrees C, O-2/Ar ratio of 3/7, working pressure of 0.8 Pa, and r.f. power of 80 W. The (002) peak intensity of the ZnO films on the Ru/Si is about five times stronger than that of the ZnO film on the Al/Si substrate. For the ZnO film deposited on the Al/Si substrate, the crystallite size was 312.75 Angstrom and the biaxial stress was -9.86 x 10(8) Pa. For the ZnO films on the Ru/Si substrate, the crystallite size was 333.66 Angstrom and biaxial stress was -1.37 x 10(8) Pa. The ZnO films on the Ru/Si substrate have a much denser structure than the ZnO films do on the Al/Si substrate. It has been found that the Ru/Si substrate is a very suitable substrate for growing the ZnO films. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：12 / 15
页数：4
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