Revisiting MOSFET threshold voltage extraction methods

被引：223

作者：

Ortiz-Conde, Adelmo ^{[1
]}

Garcia-Sanchez, Francisco J. ^{[1
]}

Muci, Juan ^{[1
]}

Barrios, Alberto Teran ^{[1
]}

Liou, Juin J. ^{[2
,3
]}

Ho, Ching-Sung ^{[4
]}

机构：

[1] Univ Simon Bolivar, Solid State Elect Lab, Caracas 1080A, Venezuela

[2] Univ Cent Florida, Dept Elect & Comp Engn, Orlando, FL 32816 USA

[3] Zhejiang Univ, Dept ISEE, Hangzhou 310003, Zhejiang, Peoples R China

[4] Powerchip Technol Corp, Hsinchu, Taiwan

来源：

MICROELECTRONICS RELIABILITY | 2013年 / 53卷 / 01期

关键词：

EFFECTIVE CHANNEL-LENGTH; PARAMETER EXTRACTION; SUBTHRESHOLD BEHAVIOR; SERIES RESISTANCE; ACCURATE METHOD; RATIO METHOD; MODEL; TRANSISTORS; TRANSCONDUCTANCE; DEFINITION;

D O I：

10.1016/j.microrel.2012.09.015

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This article presents an up-to-date review of the several extraction methods commonly used to determine the value of the threshold voltage of MOSFETs. It includes the different methods that extract this quantity from the drain current versus gate voltage transfer characteristics measured under linear operation conditions for crystalline and non-crystalline MOSFETs. The various methods presented for the linear region are adapted to the saturation region and tested as a function of drain voltage whenever possible. The implementation of the extraction methods is discussed and tested by applying them to real state-of-the-art devices in order to compare their performance. The validity of the different methods with respect to the presence of parasitic series resistance is also evaluated using 2-D simulations. (C) 2012 Elsevier Ltd. All rights reserved.

引用

页码：90 / 104

页数：15

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