The electronic structure of novel BiS2-based layered superconductor

被引:7
|
作者
Wang, Guangtao [1 ,2 ]
Liu, Chang [1 ]
Zhang, Huiping [1 ]
Zhang, Lin [1 ]
Chen, Chen [1 ]
机构
[1] Henan Normal Univ, Coll Phys & Informat Engn, Xinxiang 453007, Henan, Peoples R China
[2] Henan Key Lab Photovolta Mat, Xinxiang 453007, Peoples R China
关键词
Superconducting materials; Electronic structure of bulk materials; Electron density of states;
D O I
10.1016/j.physc.2013.08.003
中图分类号
O59 [应用物理学];
学科分类号
摘要
By means of the first-principles calculations, we studied the density of states, band structure and Fermi surface nesting of the recently discovered BiS2 layered superconductor LaO1 xFxBiS2. At x = 0, the density of state and band structure of LaOBiS2 indicate the compound is a insulator with a band gap of 0.15 eV. It becomes metal with F-doping. At x = 0.5, there are four bands crossing the Fermi level. These four bands are mostly derived from the P-x and P-y orbitals of Bi atoms. Compared with the typical Fe-As based superconductor LaOFeAs, the Fermi surface nesting of LaO1-xFxBiS2 is not as strong as that of LaOFeAs. (C) 2013 Published by Elsevier B.V.
引用
收藏
页码:114 / 117
页数:4
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