Characterization of cadmium sulphide thin films prepared by successive ionic layers adsorption and reaction method

被引：2

作者：

Rajendra, B. V. ^{[1
]}

Fuchs, Benjamin ^{[2
]}

Dhananjaya, Kekuda ^{[1
]}

机构：

[1] Manipal Univ, Manipal Inst Technol, Dept Phys, Manipal 576104, Karnataka, India

[2] Univ Jena, D-07743 Jena, Germany

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2013年 / 24卷 / 02期

关键词：

CDS NANOWIRES; HYDROGEN; GROWTH;

D O I：

10.1007/s10854-012-0975-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Cadmium sulfide (CdS) thin films were deposited on glass substrate at room temperature by successive ionic layer adsorption and reaction method (SILAR). The deposition parameters such as rinsing time, rinsing cycle and concentration of precursor solution were varied during the preparation of the samples. The structural characterization and optical characterization were carried out. The deposited films by lower growth rate and lower precursor concentration solutions were having mixed hexagonal and cubic phases. Thickness dependence of the optical band gap energy was evaluated and it varies from 2.46 to 2.32 eV in the thickness range 38-330 nm.

引用

页码：567 / 571

页数：5

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