Long-distance spin transport in high-mobility graphene on hexagonal boron nitride

被引:155
|
作者
Zomer, P. J. [1 ]
Guimaraes, M. H. D. [1 ]
Tombros, N. [1 ]
van Wees, B. J. [1 ]
机构
[1] Univ Groningen, Zernike Inst Adv Mat, Groningen, Netherlands
来源
PHYSICAL REVIEW B | 2012年 / 86卷 / 16期
关键词
EPITAXIAL GRAPHENE; SUSPENDED GRAPHENE; RELAXATION; PRECESSION; DEVICES; VALVE;
D O I
10.1103/PhysRevB.86.161416
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We performed spin transport measurements on boron nitride based single layer graphene devices with mobilities up to 40 000 cm(2) V-1 s(-1). We could observe spin transport over lengths up to 20 mu m at room temperature, the largest distance measured so far for graphene. Due to enhanced charge-carrier diffusion, spin relaxation lengths are measured up to 4.5 mu m. The relaxation times are similar to values for lower quality SiO2-based devices, around 200 ps. We find that the relaxation rate is determined in almost equal measures by the Elliott-Yafet and D'Yakonov-Perel mechanisms.
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页数:4
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