High Performance of the Thermal Transport in Graphene Supported on Hexagonal Boron Nitride

被引：8
|
作者：
Wang, Xiaoming [1 ]
Huang, Tianlan [1 ]
Lu, Shushen [1 ]
机构：
[1] Sun Yat Sen Univ, Sch Chem & Chem Engn, Guangzhou 510275, Guangdong, Peoples R China
来源：
APPLIED PHYSICS EXPRESS | 2013年 / 6卷 / 07期
基金：
中国国家自然科学基金;
关键词：
ELECTRONIC-STRUCTURE; PHONON TRANSPORT; HETEROSTRUCTURES; CONDUCTIVITY; SUBSTRATE; DEVICES; LAYER;
D O I：
10.7567/APEX.6.075202
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Hexagonal boron nitride (hBN) is a promising substrate for graphene devices. We investigated the thermal transport of graphene supported on hBN from first principles. The thermal conductance of graphene with substrate coupling greatly decreases at low temperatures but can be preserved as high as 96% that of isolated graphene at room temperature. The substrate coupling mechanism is discussed. The effects of different stacking orders and number of layers on the thermal conductance are also determined. The interesting findings obtained in this study facilitate the development of high-performance graphene devices for electronics and heat dissipation. (C) 2013 The Japan Society of Applied Physics
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页数：4
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