Influence of Ag substrates on grain alignment and critical current density of Bi-2212 tape conductors

被引:15
|
作者
Kumakura, H
Kitaguchi, H
Togano, K
Muroga, T
Sato, J
Okada, M
机构
[1] Natl Res Inst Met, Tsukuba, Ibaraki 305, Japan
[2] Hitachi Cable Ltd, Tsuchiura, Ibaraki 300, Japan
[3] Hitachi Ltd, Hitachi Res Lab, Hitachi, Ibaraki 31912, Japan
关键词
D O I
10.1109/77.784806
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We investigated the influence of Ag substrate on the microstructure and J(c) values of dip-coated Bi-2212/Ag tapes. The grain alignment of Bi-2212 in the oxide/Ag interface was much higher than that in the free surface of oxide. J(c) increases with increasing oxide/Ag interface area and with decreasing oxide layer thickness, while J(c) was almost independent of the free surface area. The smoothness of the Ag substrate is also an important factor. Micrometer-size roughness of the Ag substrate results in a decrease of Bi-2212 grain alignment and therefore J(c). Addition of alloying elements to the Ag also degrades the grain alignment of Bi-2212 and decreased J(c). Cold rolling before the heat treatment improved the grain alignment and enhanced J(c).
引用
收藏
页码:1804 / 1807
页数:4
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