Performance Analysis of Dual Vt Domino Circuits with P-V-T Variations

The leakage current, active power and delay characterizations of the domino circuits in the presence of P-V-T (Process, Voltage, and Temperature) variations are analyzed based on multiple-parameter Monte Carlo method. It is demonstrated that failing to account for P-V-T variations and process-electro-thermal couplings can result in significant inaccuracy in transistor-level performance estimation. It also indicates that under significant P-V-T variations, DTV (Dual V-t Technology) is still highly effective to reduce the leakage current and active power for domino circuits, but induces speed penalty. At last, the robustness of different domino circuits with DTV against the P-V-T variations is discussed.