Improvement in the oxidation resistance of a γ-TiAl-based alloy by sol-gel derived Al2O3 film

被引:30
|
作者
Zhang, X. J. [1 ]
Li, Q. [1 ]
Zhao, S. Y. [1 ]
Gao, C. X. [1 ]
Wang, L. [1 ]
Zhang, J. [1 ]
机构
[1] Shenyang Inst Chem Technol, Coll Appl Chem, Shenyang 110142, Peoples R China
关键词
Al2O3 thin film; Sol-gel processing; gamma-TiAl-based alloy; High-temperature oxidation;
D O I
10.1016/j.apsusc.2008.06.041
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Sol-gel thin. film offers a number of advantages that makes it an attractive method for obtaining coatings on alloy. In this paper, an Al2O3. film was deposited on a gamma-TiAl-based alloy from aluminum isopropoxide (Al(OC3H7)(3)) as precursor. The thin. film synthesized using a dip-coating process, was uniform and crack-free. Isothermal and cyclic oxidations of the coated and uncoated specimens at 1000 degrees C were performed to test its effect on the oxidation behavior of the alloy. The Al2O3. film exhibited beneficial effects on the oxidation resistance of the alloy. The oxidation rate of the Al2O3 coated specimens was much slower than that of the blank alloy. The oxide scales formed on the uncoated specimens were satisfied. For the coated samples, beneath the Al2O3. film, a mixture layer of rutile TiO2 and alpha-Al2O3 occurred, but more alpha-Al2O3 formed on the coated specimens than that on the blank ones. The possible mechanism of the thin. film on the oxidation behavior of the alloy was discussed. (C) 2008 Elsevier B. V. All rights reserved.
引用
收藏
页码:1860 / 1864
页数:5
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