A direct charge pumping technique for spatial profiling of hot-carrier induced interface and oxide traps in MOSFETs

被引：22

作者：

Mahapatra, S ^{[1
]}

Parikh, CD

Vasi, J

Rao, VR

Viswanathan, CR

机构：

[1] Indian Inst Technol, Dept Elect Engn, Bombay 400076, Maharashtra, India

[2] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA USA

来源：

SOLID-STATE ELECTRONICS | 1999年 / 43卷 / 05期

关键词：

D O I：

10.1016/S0038-1101(98)00326-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new charge pumping (CP) technique is proposed to obtain the spatial profile of interface-state density (N-it) and oxide charges (N-ot) near the drain junction of hot-carrier stressed MOSFETs. Complete separation of N-it from N-ot is achieved by using a direct noniterative method. The pre-stress CP edge is corrected for the charges associated with both the generated N-it and N-ot. A closed form model is developed to predict the stress-induced incremental CP current. The damage distributions are obtained after fitting the model with experimental data. (C) 1999 Published by Elsevier Science Ltd. All rights reserved.

引用

页码：915 / 922

页数：8

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