Langmuir probe measurements of radio frequency (RF) magnetic pole enhanced inductively coupled (MaPE-ICP) argon plasma were accomplished to obtain the electron number densities and electron temperatures. The measurements were carried out with a fixed RF frequency of 13.56 MHz in a pressure range of 7.5 mTorr to 75 mTorr at an applied RF power of 10 W and 100 W. These results are compared with a global (volume average) model. The results show good agreement between theoretical and experimental measurements. The electron number density shows an increasing trend with both RF power and pressure while the electron temperature shows decreasing trend as the pressure increases. The difference in the plasma potential and floating potential as a function of electron temperature measured from the electrical probe and that obtained theoretically shows a linear relation with a small difference in the coefficient of proportionality. The intensity of the emission line at 750.4 nm due to 2p(1) -> 1s(2) (Paschen's notation) transition closely follows the variation of n(e) with RF power and filling gas pressure. Measured electron energy probability function (EEPF) shows that electron occupation changes mostly in the high-energy tail, which highlights close similarity of 750.4 nm argon line to n(e).
机构:
Seoul Natl Univ, Dept Elect & Comp Engn, Interuniv Semicond Res Ctr, Plasma Lab, Seoul 151742, South KoreaSeoul Natl Univ, Dept Elect & Comp Engn, Interuniv Semicond Res Ctr, Plasma Lab, Seoul 151742, South Korea
Cheong, Hee-Woon
Lee, Woohyun
论文数: 0引用数: 0
h-index: 0
机构:
Seoul Natl Univ, Dept Elect & Comp Engn, Interuniv Semicond Res Ctr, Plasma Lab, Seoul 151742, South KoreaSeoul Natl Univ, Dept Elect & Comp Engn, Interuniv Semicond Res Ctr, Plasma Lab, Seoul 151742, South Korea
Lee, Woohyun
Kim, Ji-Won
论文数: 0引用数: 0
h-index: 0
机构:
Seoul Natl Univ, Dept Elect & Comp Engn, Interuniv Semicond Res Ctr, Plasma Lab, Seoul 151742, South KoreaSeoul Natl Univ, Dept Elect & Comp Engn, Interuniv Semicond Res Ctr, Plasma Lab, Seoul 151742, South Korea
Kim, Ji-Won
Whang, Ki-Woong
论文数: 0引用数: 0
h-index: 0
机构:
Seoul Natl Univ, Dept Elect & Comp Engn, Interuniv Semicond Res Ctr, Plasma Lab, Seoul 151742, South KoreaSeoul Natl Univ, Dept Elect & Comp Engn, Interuniv Semicond Res Ctr, Plasma Lab, Seoul 151742, South Korea
Whang, Ki-Woong
Kim, Hyuk
论文数: 0引用数: 0
h-index: 0
机构:
Samsung Elect Co, Banwol Dong 445701, Hwaseong, South KoreaSeoul Natl Univ, Dept Elect & Comp Engn, Interuniv Semicond Res Ctr, Plasma Lab, Seoul 151742, South Korea
Kim, Hyuk
Park, Wanjae
论文数: 0引用数: 0
h-index: 0
机构:
Tokyo Electron Miyagi Ltd, Taiwa, Miyagi 9813629, JapanSeoul Natl Univ, Dept Elect & Comp Engn, Interuniv Semicond Res Ctr, Plasma Lab, Seoul 151742, South Korea
Park, Wanjae
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A,
2015,
33
(04):
机构:
Inst Natl Polytech Grenoble, SIMAP EPM, CNRS, UMR 5614, F-38402 St Martin Dheres, FranceInst Natl Polytech Grenoble, SIMAP EPM, CNRS, UMR 5614, F-38402 St Martin Dheres, France
Lacombe, J. G.
Delannoy, Y.
论文数: 0引用数: 0
h-index: 0
机构:
Inst Natl Polytech Grenoble, SIMAP EPM, CNRS, UMR 5614, F-38402 St Martin Dheres, FranceInst Natl Polytech Grenoble, SIMAP EPM, CNRS, UMR 5614, F-38402 St Martin Dheres, France
Delannoy, Y.
Trassy, C.
论文数: 0引用数: 0
h-index: 0
机构:
Inst Natl Polytech Grenoble, SIMAP EPM, CNRS, UMR 5614, F-38402 St Martin Dheres, FranceInst Natl Polytech Grenoble, SIMAP EPM, CNRS, UMR 5614, F-38402 St Martin Dheres, France