Experimental and theoretical analysis of ZnO/Au/ZnO transparent conducting thin films

被引：14
|
作者：
He, Xiaoxiao [1 ]
Wang, Wenjun [1 ]
Li, Shuhong [1 ]
Liu, Yunlong [1 ]
Zheng, Wanquan [2 ]
Shi, Qiang [1 ]
Luo, Xin [1 ]
机构：
[1] Liaocheng Univ, Sch Phys Sci & Informat Technol, Shandong Key Lab Opt Commun Sci & Technol, Liaocheng 252059, Shandong, Peoples R China
[2] Univ Paris 11, ISMO, CNRS, F-91405 Orsay, France
来源：
VACUUM | 2015年 / 120卷
关键词：
Resistivity mechanism; Theoretical model; ZnO/Au/ZnO; Transmittance; COMPOSITE ELECTRODE; DOPED ZNO; RESISTANCE;
D O I：
10.1016/j.vacuum.2015.06.015
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The underlying mechanism of conduction of ZnO/metal/ZnO multilayer structure film was analyzed by using quantum statistical theory and a theoretical model of resistivity was proposed. The resistivity of multilayers significantly relies on the work function and the thickness of interlayer metal. When the work function of metal is higher than that of ZnO the electron flows to the semiconductor much easier. The metal Au, work function 5.4 eV, was be chosen as the middle layer. A high-quality transparent electrode of ZnO/Au/ZnO structure was obtained, with a resistivity as low as 7.0 x 10(-4) Omega cm, a high transmittance of 80% in the visible frequency region and a thickness of only 50 nm. The experiment date is agrees well with theoretical result. (C) 2015 Elsevier Ltd. All rights reserved.
引用
收藏
页码：17 / 21
页数：5
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