Ultraviolet-visible light photoluminescence induced by stacking faults in 3C-SiC nanowires

被引：12

作者：

Yu, Hailing ^{[1
,2
]}

Wang, Qiang ^{[2
,3
]}

Yang, Lei ^{[2
]}

Dai, Bing ^{[2
]}

Zhu, Jiaqi ^{[2
]}

Han, Jeicai ^{[2
]}

机构：

[1] Sun Yat Sen Univ, Affiliated Hosp 5, Guangdong Prov Engn Res Ctr Mol Imaging, Zhuhai 51900, Peoples R China

[2] Harbin Inst Technol, Ctr Composite Mat & Struct, Harbin 150080, Heilongjiang, Peoples R China

[3] Chongqing Jiaotong Univ, Sch Aeronaut, Chongqing 400000, Peoples R China

来源：

NANOTECHNOLOGY | 2019年 / 30卷 / 23期

关键词：

SiC nanowires; mixture of polytypes; optical properties; stacking faults; LARGE-SCALE SYNTHESIS; CRYSTALLINE SIC NANOWIRES; NANORODS; DEFECTS;

D O I：

10.1088/1361-6528/ab084f

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The relationship between stacking faults and optical properties in 3C-SiC nanowires is reported in this paper. 3C-SiC nanowires prepared at 900 degrees C have high density stacking faults. The stacking faults cause a change in the Si-C atom stacking sequence and form nanosegments of 4H-SiC and 6H-SiC in the 3C-SiC matrix. The mixture of polytypes leads to a shift in the peaks and the addition of peaks in both Raman spectra and photoluminescence (PL) spectra. The Raman peaks are centered at 785 cm(-1) and at 935 cm(-1) and correspond to the transverse optic mode and the longitudinal optic mode of 3C-SiC, respectively. The PL peaks are blueshifted and the emissions are in the ultraviolet-visible light band.

引用

页数：6

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