Reflection high-energy electron diffraction intensity oscillation during layer-by-layer oxidation of Si(001) surfaces

被引：18
|
作者：
Watanabe, H
Baba, T
Ichikawa, M
机构：
[1] NEC Corp Ltd, Fundamental Res Labs, Ibaraki, Osaka 3058501, Japan
[2] Angstrom Technol Partnership, Joint Res Ctr Atom Technol, Ibaraki, Osaka 3050046, Japan
来源：
APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 22期
关键词：
D O I：
10.1063/1.123308
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have studied initial layer-by-layer oxidation of Si(001)-2X1 surfaces by using reflection high-energy electron diffraction (RHEED). We observed an intensity oscillation and a change in the streaky profile of a specular reflection spot in RHEED patterns during initial oxidation. These results indicate that layer-by-layer oxidation of Si surfaces is promoted by nucleation and lateral growth of two-dimensional oxide islands. We have also confirmed that a 1-monolayer-thick oxide has an ordered structure originating from the initial 2X1 reconstruction. (C) 1999 American Institute of Physics. [S0003-6951(99)00922-5].
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页码：3284 / 3286
页数：3
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