Theoretical Study of Ionization of Polymers for EUV Resist

被引:4
|
作者
Endo, Masayuki [1 ,2 ]
Tagawa, Seiichi [1 ,2 ]
机构
[1] Osaka Univ, Inst Sci & Ind Res, Ibaraki, Osaka 5670047, Japan
[2] Osaka Univ, Japan Sci & Technol Agcy, CREST, Ibaraki, Osaka 5670047, Japan
关键词
lithography; EUV; resist; polymer; ionization; quantum chemical calculation; CHEMICALLY AMPLIFIED RESISTS; POST-OPTICAL LITHOGRAPHY; ACID GENERATION; ELECTRON-BEAM; X-RAY; RADIATION; DEPENDENCE;
D O I
10.2494/photopolymer.25.101
中图分类号
O63 [高分子化学(高聚物)];
学科分类号
070305 ; 080501 ; 081704 ;
摘要
We have investigated the ionization of polymers for extreme ultraviolet (EUV) exposure. Quantum chemical calculation was performed. Upon EUV exposure to the polymer in a resist, the ionization of the polymer occurs and the secondary electrons generate. As the secondary electrons from the polymer cause the reaction of photoacid generator and the photoacid generates, the ionization of the polymer is a key for the sensitivity of resist for EUV. In this paper, the study of polymers was performed. The styrene polymer and acrylate polymer with various substituents and pendant groups were compared. We found that the electron providing substituents assist the ionization of the polymer. Protecting groups of poly(4-hydroxystyrene) decrease the ionization. It was found that the stable condition of radical cation of poly(methacrylic acid) helps the ionization of the polymer.
引用
收藏
页码:101 / 108
页数:8
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