Conductance of disordered graphene sheets: A real space approach

被引:10
|
作者
Chowdhury, Suman [1 ]
Jana, Debnarayan [1 ]
Mookerjee, Abhijit [2 ,3 ,4 ]
机构
[1] Univ Calcutta, Dept Phys, Kolkata 700009, India
[2] SN Bose Natl Ctr Basic Sci, Kolkata 700098, India
[3] Presidency Univ, Dept Phys, Kolkata 700073, India
[4] Lady Brahourne Coll, Dept Phys, Kolkata 700017, India
关键词
Graphene; Extended disordered defects; Transport property; Real space recursion method; QUANTUM-MECHANICAL TRANSMITTANCE; TRANSPORT-PROPERTIES; ELECTRONIC-STRUCTURE; 1ST-PRINCIPLES CALCULATION; OPTICAL-PROPERTIES; CARBON; BORON; TRANSITION; RESISTANCE; NITROGEN;
D O I
10.1016/j.physe.2015.07.019
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In this work the conducting properties of graphenc lattice (buckled as well as planar) having different concentrations of defects are studied with the help of real space block recursion method introduced by Haydock et al. Since the defects are completely random, reciprocal space based methods which need artificial periodicity are not applicable here. Different resonant states appear because of the presence of topological and local defects which are calculated within the framework of Green function. Except random voids, in all other density of states (DOS) spectra there arc signatures of Breit-Wigner and Farmo resonance at occupied and unoccupied regime respectively. Although Fano resonance states are not prominent for graphene with random voids, however Stone-Wales (SW) type detect can naturally introduce their resonance states. The appearance or localized states depends strongly On the concentration of defects. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码:347 / 354
页数:8
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