A high-performance polysilicon thin-film transistor built on a trenched body

被引：6
|
作者：
Lin, Jyi-Tsong [1 ]
Huang, Kuo-Dong [1 ]
机构：
[1] Natl Sun Yat Sen Univ, Dept Elect Engn, Kaohsiung 80424, Taiwan
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2008年 / 55卷 / 09期
关键词：
back-interface conduction; grain-boundary traps; lateral electric field; OFF-state leakage; thin film transistor (TFT); trenched body;
D O I：
10.1109/TED.2008.927667
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, a high-performance polysilicon thin-film transistor (poly-Si TFT) with a trenched body is proposed, fabricated, and studied. This new trenched TFT can be easily produced by filling and etch-back technology without destroying the channel film quality. The addition of the body trench is found to reduce the OFF-state leakage current by 70% on average, because the trench induces a carrier scattering effect in the poly-Si grain-boundary traps, thereby affecting the leakage path. Although the OFF-state current is substantially reduced, the ON-state current is comparable with that of a conventional TFT. Our multiple-trenched-body TFT is also shown to improve the breakdown voltage by 11%.
引用
收藏
页码：2417 / 2422
页数：6
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