Fabrication of nanocrystal ink based superstrate-type CuInS2 thin film solar cells
被引:26
|
作者:
Cho, Jin Woo
论文数: 0引用数: 0
h-index: 0
机构:
Korea Inst Sci & Technol, Clean Energy Res Ctr, Seoul 136791, South Korea
Korea Univ, Dept Mat & Engn, Seoul 136713, South KoreaKorea Inst Sci & Technol, Clean Energy Res Ctr, Seoul 136791, South Korea
Cho, Jin Woo
[1
,2
]
Park, Se Jin
论文数: 0引用数: 0
h-index: 0
机构:
Korea Inst Sci & Technol, Clean Energy Res Ctr, Seoul 136791, South KoreaKorea Inst Sci & Technol, Clean Energy Res Ctr, Seoul 136791, South Korea
Park, Se Jin
[1
]
Kim, Woong
论文数: 0引用数: 0
h-index: 0
机构:
Korea Univ, Dept Mat & Engn, Seoul 136713, South KoreaKorea Inst Sci & Technol, Clean Energy Res Ctr, Seoul 136791, South Korea
Kim, Woong
[2
]
Min, Byoung Koun
论文数: 0引用数: 0
h-index: 0
机构:
Korea Inst Sci & Technol, Clean Energy Res Ctr, Seoul 136791, South KoreaKorea Inst Sci & Technol, Clean Energy Res Ctr, Seoul 136791, South Korea
Min, Byoung Koun
[1
]
机构:
[1] Korea Inst Sci & Technol, Clean Energy Res Ctr, Seoul 136791, South Korea
[2] Korea Univ, Dept Mat & Engn, Seoul 136713, South Korea
A CuInS2 (CIS) nanocrystal ink was applied to thin film solar cell devices with superstrate-type configuration. Monodispersed CIS nanocrystals were synthesized by a colloidal synthetic route and re-dispersed in toluene to form an ink. A spray method was used to coat CIS films onto conducting glass substrates. Prior to CIS film deposition, TiO2 and CdS thin films were also prepared as a blocking layer and a buffer layer, respectively. We found that both a TiO2 blocking layer and a CdS buffer layer are necessary to generate photoresponses in superstrate-type devices. The best power conversion efficiency (similar to 1.45%) was achieved by the CIS superstrate-type thin film solar cell device with 200 and 100 nm thick TiO2 and CdS films, respectively.
机构:
Univ Sci & Technol China, Dept Mat Sci & Engn, CAS Key Lab Mat Energy Convers, Hefei 230026, Peoples R ChinaUniv Sci & Technol China, Dept Mat Sci & Engn, CAS Key Lab Mat Energy Convers, Hefei 230026, Peoples R China
Wang, Wen
Xiong, Jie
论文数: 0引用数: 0
h-index: 0
机构:
Univ Sci & Technol China, Dept Mat Sci & Engn, CAS Key Lab Mat Energy Convers, Hefei 230026, Peoples R ChinaUniv Sci & Technol China, Dept Mat Sci & Engn, CAS Key Lab Mat Energy Convers, Hefei 230026, Peoples R China
Xiong, Jie
Zhu, Chang-fei
论文数: 0引用数: 0
h-index: 0
机构:
Univ Sci & Technol China, Dept Mat Sci & Engn, CAS Key Lab Mat Energy Convers, Hefei 230026, Peoples R ChinaUniv Sci & Technol China, Dept Mat Sci & Engn, CAS Key Lab Mat Energy Convers, Hefei 230026, Peoples R China
Zhu, Chang-fei
Jiang, Guo-shun
论文数: 0引用数: 0
h-index: 0
机构:
Univ Sci & Technol China, Dept Mat Sci & Engn, CAS Key Lab Mat Energy Convers, Hefei 230026, Peoples R ChinaUniv Sci & Technol China, Dept Mat Sci & Engn, CAS Key Lab Mat Energy Convers, Hefei 230026, Peoples R China
机构:
Osaka Inst Technol, Fac Engn, Dept Appl Chem, 5-16-1 Omiya,Asahi Ku, Osaka 5358585, JapanOsaka Inst Technol, Fac Engn, Dept Appl Chem, 5-16-1 Omiya,Asahi Ku, Osaka 5358585, Japan
Harino, Takayuki
Harada, Yoshiyuki
论文数: 0引用数: 0
h-index: 0
机构:
Osaka Inst Technol, Nanomat Microdevices Res Ctr, 5-16-1 Omiya Asahi ku, Osaka 5358585, JapanOsaka Inst Technol, Fac Engn, Dept Appl Chem, 5-16-1 Omiya,Asahi Ku, Osaka 5358585, Japan
Harada, Yoshiyuki
Fujimoto, Akira
论文数: 0引用数: 0
h-index: 0
机构:
Osaka Inst Technol, Nanomat Microdevices Res Ctr, 5-16-1 Omiya Asahi ku, Osaka 5358585, JapanOsaka Inst Technol, Fac Engn, Dept Appl Chem, 5-16-1 Omiya,Asahi Ku, Osaka 5358585, Japan
Fujimoto, Akira
Takahashi, Masanari
论文数: 0引用数: 0
h-index: 0
机构:
Osaka Res Inst Ind Sci & Technol, 1-6-50 Morinomiya Joto Ku, Osaka 5368553, JapanOsaka Inst Technol, Fac Engn, Dept Appl Chem, 5-16-1 Omiya,Asahi Ku, Osaka 5358585, Japan
机构:
Osaka Inst Technol, Fac Engn, Dept Appl Chem, Asahi Ku, 5-16-1 Omiya, Osaka 5358585, JapanOsaka Inst Technol, Fac Engn, Dept Appl Chem, Asahi Ku, 5-16-1 Omiya, Osaka 5358585, Japan
Tani, Yuki
Imada, Keiichiro
论文数: 0引用数: 0
h-index: 0
机构:
Osaka Inst Technol, Fac Engn, Dept Appl Chem, Asahi Ku, 5-16-1 Omiya, Osaka 5358585, JapanOsaka Inst Technol, Fac Engn, Dept Appl Chem, Asahi Ku, 5-16-1 Omiya, Osaka 5358585, Japan
Imada, Keiichiro
Kamimura, Tomosumi
论文数: 0引用数: 0
h-index: 0
机构:
Osaka Inst Technol, Fac Engn, Dept Elect Informat & Commun Engn, Asahi Ku, 5-16-1 Omiya, Osaka 5358585, JapanOsaka Inst Technol, Fac Engn, Dept Appl Chem, Asahi Ku, 5-16-1 Omiya, Osaka 5358585, Japan
Kamimura, Tomosumi
Takahashi, Masanari
论文数: 0引用数: 0
h-index: 0
机构:
Osaka Res Inst Ind Sci & Technol, Joto Ku, 1-6-50 Morinomiya, Osaka 5368553, JapanOsaka Inst Technol, Fac Engn, Dept Appl Chem, Asahi Ku, 5-16-1 Omiya, Osaka 5358585, Japan
机构:
Carl von Ossietzky Univ Oldenburg, Dept Phys, Energy & Semicond Res Lab, Carl von Ossietzky Str 9-11, D-26129 Oldenburg, GermanyCarl von Ossietzky Univ Oldenburg, Dept Phys, Energy & Semicond Res Lab, Carl von Ossietzky Str 9-11, D-26129 Oldenburg, Germany
Scheunemann, Dorothea
Wilken, Sebastian
论文数: 0引用数: 0
h-index: 0
机构:
Carl von Ossietzky Univ Oldenburg, Dept Phys, Energy & Semicond Res Lab, Carl von Ossietzky Str 9-11, D-26129 Oldenburg, GermanyCarl von Ossietzky Univ Oldenburg, Dept Phys, Energy & Semicond Res Lab, Carl von Ossietzky Str 9-11, D-26129 Oldenburg, Germany
Wilken, Sebastian
Parisi, Juergen
论文数: 0引用数: 0
h-index: 0
机构:
Carl von Ossietzky Univ Oldenburg, Dept Phys, Energy & Semicond Res Lab, Carl von Ossietzky Str 9-11, D-26129 Oldenburg, GermanyCarl von Ossietzky Univ Oldenburg, Dept Phys, Energy & Semicond Res Lab, Carl von Ossietzky Str 9-11, D-26129 Oldenburg, Germany
Parisi, Juergen
Borchert, Holger
论文数: 0引用数: 0
h-index: 0
机构:
Carl von Ossietzky Univ Oldenburg, Dept Phys, Energy & Semicond Res Lab, Carl von Ossietzky Str 9-11, D-26129 Oldenburg, GermanyCarl von Ossietzky Univ Oldenburg, Dept Phys, Energy & Semicond Res Lab, Carl von Ossietzky Str 9-11, D-26129 Oldenburg, Germany