Magnetic susceptibility of wide-gap semiconductors

被引：0
|
作者：
Davydov, SY
Tikhonov, SK
机构：
来源：
SEMICONDUCTORS | 1996年 / 30卷 / 04期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The magnetic susceptibilities of diamond, silicon carbide, and boron, aluminum, and gallium nitrides are calculated on the basis of Harrison's tight-binding model. The diamagnetic contributions of the core and valence electrons and the paramagnetic component are analyzed. It is shown that the magnetic susceptibility increases in the sequence SiC-BN-AlN-GaN. (C) 1996 American Institute of Physics.
引用
收藏
页码：375 / 376
页数：2
相关论文
共 50 条
  • [21] Excitons in wide-gap semiconductors:: Coherence, dynamics, and lasing
    Gutowski, J
    Michler, P
    Rückmann, HI
    Breunig, HG
    Röwe, M
    Sebald, K
    Voss, T
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2002, 234 (01): : 70 - 83
  • [22] ODMR IN IONIC CRYSTALS AND WIDE-GAP SEMICONDUCTORS.
    Baranov, P.G.
    Romanov, N.G.
    Bulletin of the Academy of Sciences of the U.S.S.R. Physical series, 1985, 50 (02): : 14 - 17
  • [23] Wide-gap semiconductors for high-power electronics
    A. A. Lebedev
    V. E. Chelnokov
    Semiconductors, 1999, 33 : 999 - 1001
  • [24] Wide-gap semiconductors for high-power electronics
    Lebedev, AA
    Chelnokov, VE
    SEMICONDUCTORS, 1999, 33 (09) : 999 - 1001
  • [25] Elastic constants and phonon frequencies of wide-gap semiconductors
    Davydov, SY
    Tikhonov, SK
    SEMICONDUCTORS, 1996, 30 (05) : 447 - 449
  • [26] RECOMBINATION-TRAP BARRIERS IN WIDE-GAP SEMICONDUCTORS
    STAFEEV, VI
    ELTSOV, AV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (05): : 549 - 551
  • [27] CHARACTERISTICS OF DOUBLE INJECTION IN WIDE-GAP SEMICONDUCTORS.
    Zyuganov, A.N.
    Koren', N.N.
    Smertenko, P.S.
    Soviet journal of communications technology & electronics, 1987, 32 (08): : 42 - 47
  • [28] Relaxation of highly excited carriers in wide-gap semiconductors
    Tyuterev, V. G.
    Zhukov, V. P.
    Echenique, P. M.
    Chulkov, E. V.
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2015, 27 (02)
  • [29] Overcoming doping bottlenecks in semiconductors and wide-gap materials
    Zhang, SB
    Wei, SH
    Zunger, A
    PHYSICA B-CONDENSED MATTER, 1999, 273-4 : 976 - 980
  • [30] CARRIER ENERGY FLUCTUATION SHIFT IN WIDE-GAP ANTIFERROMAGNETIC SEMICONDUCTORS
    ERUKHIMOV, MS
    OVCHINNIKOV, SG
    FIZIKA TVERDOGO TELA, 1986, 28 (08): : 2306 - 2309
12345