Machine learning for variability aware statistical device design: The case of perpendicular spin-transfer-torque random access memory

被引：0
|
作者：
Roy, Urmimala [1 ]
Pramanik, Tanmoy [2 ]
Roy, Subhendu [3 ]
Register, Leonard F. [2 ]
Banerjee, Sanjay K. [2 ]
机构：
[1] TDK Headway Technol, 682 S Hillview Dr, Milpitas, CA 95035 USA
[2] Univ Texas Austin, Microelect Res Ctr, 10100 Burnet Rd, Austin, TX 78758 USA
[3] Cadence Design Syst, 2655 Seely Ave, San Jose, CA 95134 USA
来源：
2017 75TH ANNUAL DEVICE RESEARCH CONFERENCE (DRC) | 2017年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页数：2
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