Ultra-Low Voltage and Ultra-Low Power Consumption Nonvolatile Operation of a Three-Terminal Atomic Switch

被引：15

作者：

Wang, Qi ^{[1
,2
,3
]}

Itoh, Yaomi ^{[1
,2
]}

Tsuruoka, Tohru ^{[1
,2
]}

Aono, Masakazu ^{[1
]}

Hasegawa, Tsuyoshi ^{[1
,2
,4
]}

机构：

[1] Natl Inst Mat Sci, World Premier Int, Ctr Mat Nanoarchitecton MANA, Tsukuba, Ibaraki 3050044, Japan

[2] Japan Sci & Technol Agcy, CREST, Tokyo 1020075, Japan

[3] Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China

[4] Waseda Univ, Fac Sci & Engn, Shinjuku Ku, Tokyo 1698555, Japan

来源：

ADVANCED MATERIALS | 2015年 / 27卷 / 39期

基金：

中国国家自然科学基金; 日本科学技术振兴机构;

关键词：

atomic switches; low voltage; redox; ReRAM; three terminal; NANOIONICS; DEVICES; MECHANISMS; MEMORIES;

D O I：

10.1002/adma.201502678

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Nonvolatile three-terminal operation, with a very small range of bias sweeping (-80 to 250 mV), a high on/off ratio of up to six orders of magnitude, and a very small gate leakage current (< 1 pA), is demonstrated using an Ag (gate)/Ta2O5 (ionic transfer layer)/Pt (source), Pt (drain) three-terminal atomic switch structure.

引用

页码：6029 / 6033

页数：5

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