Modeling on Current-Voltage Characteristics of HgCdTe Photodiodes in Forward Bias Region

被引：0
|
作者：
Li, Yang [1 ]
Ye, Zhenhua [1 ]
Lin, Chun [1 ]
Hu, Xiaoning [1 ]
Ding, Ruijun [1 ]
He, Li [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Key Lab Infrared Imaging Mat & Detectors, Shanghai 200083, Peoples R China
来源：
2012 12TH INTERNATIONAL CONFERENCE ON NUMERICAL SIMULATION OF OPTOELECTRONIC DEVICES (NUSOD) | 2012年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Current-voltage (I-V) characteristics of HgCdTe photodiodes in the forward bias region have been modeled on account of mechanisms including diffusion and recombination currents, metal-semiconductor (M-S) contact and constant series resistance. Moreover, a data processing approach has been developed to obtain valuable physical parameters from measured I-V curves. This model and algorithm have also been verified to be available and promising by the fitting results on device parameters of HgCdTe photodiodes.
引用
收藏
页码：19 / 20
页数：2
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