A Wideband Gate Mixer Using 0.15 μm GaAs Enhancement-Mode PHEMT Technology

被引:0
|
作者
Wang, Xi [1 ,2 ]
Hu, Jun [1 ]
Su, Yongbo [1 ]
Ding, Peng [1 ]
Ding, Wuchang [1 ]
Yang, Feng [1 ]
Muhammad, Asif [1 ]
Jin, Zhi [1 ]
机构
[1] Chinese Acad Sci, Inst Microelect, Beijing, Peoples R China
[2] Univ Chinese Acad Sci, Beijing, Peoples R China
来源
PROGRESS IN ELECTROMAGNETICS RESEARCH LETTERS | 2019年 / 84卷
基金
中国国家自然科学基金;
关键词
DESIGN;
D O I
10.2528/PIERL18111608
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a wideband gate mixer using 0.15 mu m GaAs enhancement-mode pseudomorphic high electron mobility transistor (E-mode PHEMT) process. The proposed mixer is based on a single-ended gate mixer topology. Proper input matching networks are used to ensure good conversion gain as well as a wide frequency band. A lambda/4 open stub at local oscillator (LO) frequency and a low-pass filter at the drain terminal do great help to enhance LO-IF and RF-IF isolation performance. A Lange coupler is used to maintain LO-RF isolation in a wide frequency band. The measured results show that the mixer operates in wide RF frequency of 17-26 GHz and IF frequency of 0.8-1.7 GHz with a conversion gain of 5-8 dB. The 1 dB compression point (P-1dB) is -1 similar to 1 dBm, and the needed LO power is only 1 dBm. The LO-IF, RF-IF, and LO-RF isolations are about 45, 45, and 20 dB, respectively. This represents excellent performance for GaAs PHEMT mixer in terms of frequency bandwidth, conversion gain, isolation, and P-1dB performance.
引用
收藏
页码:7 / 14
页数:8
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