Dependence of ferromagnetic properties on phosphorus concentration in Ga1-xMnxAs1-yPy

被引：11

作者：

Li, Xiang ^{[1
]}

Liu, Xinyu ^{[1
]}

Dong, Sining ^{[1
]}

Gorsak, Cameron ^{[1
]}

Furdyna, Jacek K. ^{[1
]}

Dobrowolska, Margaret ^{[1
]}

Bac, Seul-Ki ^{[2
]}

Lee, Sanghoon ^{[2
]}

Rouvimov, Sergei ^{[3
,4
]}

机构：

[1] Univ Notre Dame, Dept Phys, Notre Dame, IN 46556 USA

[2] Korea Univ, Dept Phys, Seoul 136701, South Korea

[3] Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA

[4] Univ Notre Dame, Notre Dame Integrated Imaging Facil, Notre Dame, IN 46556 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2018年 / 36卷 / 02期

关键词：

MAGNETIC-ANISOTROPY; SEMICONDUCTORS; LAYERS; GAP;

D O I：

10.1116/1.5014055

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A series of Ga1-xMnxAs1-yPy thin films grown on GaAs (100) substrates by molecular beam epitaxy were systematically investigated to establish the effect of phosphorous on structural and magnetic properties of the alloy. Detailed characterization of both as-grown and annealed samples by x-ray diffraction and magnetometry were carried out. Reciprocal space map scans confirmed that the quaternary alloy is fully strained by the substrate throughout its thickness. Magnetization measurements revealed a clear trend of decreasing Curie temperature with increasing P concentration, and revealed that the magnetic easy axis gradually turns from in-plane to out-to-plane orientation as P concentration increases. Published by the AVS.

引用

页数：6

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