Positron annihilation studies of boron ion-irradiated selenium

被引：0
|
作者：
Vijay, YK [1 ]
Vijai, RK
Jain, IP
Avasthi, DK
Tripathi, A
机构：
[1] Univ Rajasthan, Dept Phys, Jaipur 302004, Rajasthan, India
[2] Ctr Nucl Sci, New Delhi 110067, India
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1999年 / 156卷 / 1-4期
关键词：
positron annihilation; point charge defects; boron irradiation; semi conductor;
D O I：
10.1016/S0168-583X(99)00285-2
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Positron lifetime measurements have been carried out on pellets of polycrystalline selenium and irradiated by 60 MeV boron ions, at NSC Pelletron. A pair of samples is irradiated in two different ways: (i) monoenergetic beam (60 MeV), (ii) moderated beam (0-60 MeV). It is found that in case (i), the lifetime value of tau(1) increases from 235 to 310 ps with the dose in the samples. However in case (ii), the value of tau(1) remains constant throughout. The results are explained on the basis of generation of point charge defects C-1(-) type, generated by electronic stopping. The effects of nuclear stopping are observed in both the cases where the value of tau(2) increases. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：270 / 274
页数：5
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