Atomic Layer Deposition of Cobalt, Nickel, and Iron Sulfides: Synthesis and Applications

被引:3
|
作者
Wang, Xinwei [1 ]
机构
[1] Peking Univ, Sch Adv Mat, Shenzhen Grad Sch, Shenzhen 518055, Peoples R China
来源
基金
中国国家自然科学基金;
关键词
D O I
10.1149/08003.0077ecst
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Recent development on the atomic layer deposition (ALD) of CoSx, NiSx, and FeSx is presented. The sulfides are deposited by using metal amidinates as the metal precursors and H2S as the sulfur source. Ideal saturated, self-limiting growth behaviors are observed for all these ALD processes, and the deposited sulfide films are able to uniformly and conformally cover deep narrow trenches with high aspect ratio of 10:1. Examples of using these ALD processes to synthesize CoSx, NiSx, and FeSx thin films for the respective applications in supercapacitors, electrocatalysis, and chemical catalysis are also presented.
引用
收藏
页码:77 / 85
页数:9
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