An a-Si:H TFT Manufactured on an Ultra-Thin Mo Foil

被引：4
|
作者：
Cheon, Jun Hyuk [1 ]
Lee, Won Gyu [1 ]
Kim, Se Hwan [1 ]
Jang, Jin [1 ]
Kumer, Prabhat [2 ]
机构：
[1] Kyung Hee Univ, Adv Display Res Ctr, Seoul 130701, South Korea
[2] HC Starck Inc, Newton, MA 02461 USA
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2009年 / 54卷 / 01期
关键词：
Amorphous silicon; Thin-film transistor; Mo foil; Mechanical stress; AMORPHOUS-SILICON TRANSISTORS; FILM-TRANSISTOR; DISPLAYS;
D O I：
10.3938/jkps.54.427
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We have studied the fabrication of hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) backplanes on flexible molybdenum (Mo) foils. An a-Si:H TFT manufactured on a 21-mu m-thick Mo foil exhibited a field-effect mobility of 0.27 cm(2)/Vs, a threshold voltage of 6.8 V and a sub-threshold slope of 1.2 V/decade. We found that the TFT performance on the foil was stable until a bending with a radius of 10 mm inward or outward.
引用
收藏
页码：427 / 431
页数：5
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