An a-Si:H TFT Manufactured on an Ultra-Thin Mo Foil

被引：4

作者：

Cheon, Jun Hyuk ^{[1
]}

Lee, Won Gyu ^{[1
]}

Kim, Se Hwan ^{[1
]}

Jang, Jin ^{[1
]}

Kumer, Prabhat ^{[2
]}

机构：

[1] Kyung Hee Univ, Adv Display Res Ctr, Seoul 130701, South Korea

[2] HC Starck Inc, Newton, MA 02461 USA

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2009年 / 54卷 / 01期

关键词：

Amorphous silicon; Thin-film transistor; Mo foil; Mechanical stress; AMORPHOUS-SILICON TRANSISTORS; FILM-TRANSISTOR; DISPLAYS;

D O I：

10.3938/jkps.54.427

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have studied the fabrication of hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) backplanes on flexible molybdenum (Mo) foils. An a-Si:H TFT manufactured on a 21-mu m-thick Mo foil exhibited a field-effect mobility of 0.27 cm(2)/Vs, a threshold voltage of 6.8 V and a sub-threshold slope of 1.2 V/decade. We found that the TFT performance on the foil was stable until a bending with a radius of 10 mm inward or outward.

引用

页码：427 / 431

页数：5

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