Epitaxial growth of Bi2Sr2-xLaxCu1O6+δ thin films on vicinal SrTiO3 substrates

被引:9
|
作者
Zhang, YZ
Qin, YL
Deltour, R
Tao, HJ
Li, L
Zhao, XZ
机构
[1] Free Univ Brussels, B-1050 Brussels, Belgium
[2] Nat Lab Superconduct, Inst Phys, Beijing 100080, Peoples R China
[3] Chinese Acad Sci, Ctr Condensed Matter Phys, Beijing 100080, Peoples R China
来源
PHYSICA C | 1999年 / 322卷 / 1-2期
关键词
epitaxial growth; Bi2Sr2-xLaxCu1O6+delta thin films; SrTiO3; substrates;
D O I
10.1016/S0921-4534(99)00429-3
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have studied the epitaxy of Bi2Sr2-xLaxCuO6+d (La-2201) superconducting thin films deposited by RF sputtering on vicinal SrTiO3 (STO) substrates, The surface of the single crystal substrate is cut at an angle of 6 degrees with respect to the (100) basal plane, being rotated around the [110] axis direction. Contrary to films deposited on untilted single crystal substrate, the AFM surface topographies of the La-2201 films deposited on the tilted substrates show elongated stripe-like shapes. Transmission electron microscopy (TEM) and electron diffraction show a film growth with very good crystallographic alignments very similar to what is observed on La-2201 single crystals. The temperature dependency of the a- and c-axis resistivities confirm the high epitaxial quality of the films, as evidenced by atomic force microscopy (AFM) and TEM studies. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:73 / 78
页数:6
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