Devices with Te-doped InGaP layers

被引：0
|
作者：
Kudela, R. [1 ]
Gregusova, D. [1 ]
Stoklas, R. [1 ]
机构：
[1] Slovak Acad Sci, Inst Elect Engn, Bratislava 84104, Slovakia
来源：
NINTH INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS | 2012年
关键词：
TELLURIUM; GAAS; GAINP;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Highly n-type doped and several nanometres thick layers are necessary for various device structures, especially HEMTs. We studied delta doping In1-XGaXP ternary with tellurium, the layers were grown by MOVPE. A low growth temperature of 560 degrees C was used to restrict the influence of diffusion, and diethyltellurium was used as the precursor. A maximum Hall sheet concentration of 2.75x10(13) cm(-2) was achieved. Very thin HEMT structures with high conductivity and HEMTs were prepared using the In1-XGaXP barriers doped with tellurium.
引用
收藏
页码：111 / 114
页数：4
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