Electronic and optical properties of Cu2ZnGeX4 (X = S, Se and Te) quaternary semiconductors

被引：59

作者：

Chen, Dongguo ^{[1
]}

Ravindra, N. M. ^{[1
]}

机构：

[1] New Jersey Inst Technol, Dept Phys, Newark, NJ 07102 USA

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2013年 / 579卷

关键词：

Cu2ZnGeX4(X; S; Se; Te); Band structure; Density of states; Dielectric function; Refractive index; Absorption; CHALCOGENIDES; CD; VI;

D O I：

10.1016/j.jallcom.2013.06.048

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The electronic structures and optical properties of Cu2ZnGeS4, Cu2ZnGeSe4 and Cu2ZnGeTe4 in kesterite and stannite structures are investigated using first-principles calculations. The critical points in the optical spectra are assigned to the interband transitions according to the calculated band structures. The trends in the variation of the electronic and optical properties are discussed with respect to the crystal structure and the anion atomic number. Our calculated properties, such as, lattice constants, optical transitions, refractive index and dielectric constants are compared to the available experimental data and good agreement is obtained. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：468 / 472

页数：5

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