Full band Monte Carlo simulation of dislocation effects on 250 nm AlGaN-GaN HEMT

被引：0

作者：

Vitobello, Fabio ^{[2
]}

Faralli, Nicolas ^{[1
]}

Yamakawa, Shinya ^{[1
]}

Goodnick, Stephen M. ^{[1
]}

Saraniti, Marco ^{[1
]}

机构：

[1] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA

[2] Univ Padua, Dept Elect Engn, Padua, Italy

来源：

JOURNAL OF COMPUTATIONAL ELECTRONICS | 2008年 / 7卷 / 03期

关键词：

Full band Monte Carlo; Dislocation scattering; GaN; HEMT;

D O I：

10.1007/s10825-008-0215-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, we present a full band Monte Carlo simulation of the effects of dislocation scattering on the performance of a 0.25 mu m AlGaN/GaN HEMT (high electron mobility transistor). We performed a full characterization of the device and validated the simulation results with experimental data (Lee et al. in IEEE Electron. Dev. Lett. 24:613-615, 2003). Here we show a study of the DC device performance as a function of the density of thread dislocations.

引用

页码：244 / 247

页数：4

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