Zinc oxide thin films deposited by magnetron sputtering with various oxygen/argon concentrations

被引：17
|
作者：
Damiani, L. R. [1 ]
Mansano, R. D. [1 ]
机构：
[1] Univ Sao Paulo, Dept Engn Sistemas Eletron, Sao Paulo, Brazil
来源：
14TH LATIN AMERICAN WORKSHOP ON PLASMA PHYSICS (LAWPP 2011) | 2012年 / 370卷
关键词：
ZNO;
D O I：
10.1088/1742-6596/370/1/012019
中图分类号：
O35 [流体力学]; O53 [等离子体物理学];
学科分类号：
070204 ; 080103 ; 080704 ;
摘要：
Deposition of zinc oxide thin films onto silicon and thermally oxidized silicon substrates was performed by radio frequency magnetron sputtering. The obtained films were studied in function of percentage of oxygen and argon flow as process gases. Stoichiometric films were obtained in oxygen rich process conditions, which are more suitable to be p-type doped. Growth of zinc oxide films over thermally oxidized substrates resulted in better structural characteristics.
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页数：7
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